Magnachip Semiconductor Corporation announced has begun mass production of two new 650V Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFET) devices. These new SJ MOSFETs offer excellent design flexibility, efficient heat dissipation, and low RDS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) characteristics. As a result, they are well-suited for various applications that require compact size and high efficiency inc consumer electronics, as well as for chargers and adapters.
These two 650V SJ MOSFETs (MMUB65R090RURH, MMUB65R115RURH) utilize an innovative PDFN88 package, which significantly reduces their thickness and size. The thickness has been reduced by approximately 81% compared to D2PAK products and 63% compared to DPAK products, while the overall footprint has been reduced to about 41% of D2PAK SJ MOSFETs.
“Magnachip will continue to develop high-performance power solutions enhanced by new packaging technology, building upon the successful mass production of these 650V SJ MOSFET products,” says YJ Kim, CEO of Magnachip. “We aim to drive expansion in the electronics market through our extended product portfolio and rigorous quality control.”
New 650V SJ MOSFETs in a PDFN88 package
At same time, the South Korean semiconductor manufacturer announced the release of its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology
Magnachip’s latest design technology improves upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50% and lowering the RDS(on) by 42%. As a result, this product comes in the same Decawatt Package (DPAK), while offering the low RDS(on) of 175mΩ and outstanding power density.
Furthermore, the total gate charge is lowered by approximately 29% compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. The power efficiency is in fact one of the key features of this product, as it gives product designers flexibility with regards to various applications.
In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges. With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be used in a wide range of applications.
“Magnachip plans to unveil additional 6th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024. Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration,” says YJ Kim, CEO of Magnachip.
Magnachip designs and manufactures a broad range of analog and mixed-signal semiconductor platform solutions for communications, IoT, consumer, computing, industrial and automotive applications. With more than 40 years of operating history, the Seoul-based company owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise.
www.magnachip.com
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